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| sot-23 1. base 2. emitter 3. collector transistor(pnp) features z complimentary to s8050 z collector current: i c =0.5a marking : 2ty maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage -40 v v ceo collector-emitter voltage -25 v v ebo emitter-base voltage -5 v i c collector current -continuous -0.5 a p c collector power dissipation 0.3 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v (br)cbo i c = -100 a, i e =0 -40 v collector-emitter breakdown voltage v (br)ceo i c =-1ma, i b =0 -25 v emitter-base breakdown voltage v (br)ebo i e = -100 a, i c =0 -5 v collector cut-off current i cbo v cb = -40v, i e =0 -0.1 a collector cut-off current i ceo v ce = -20v, i b =0 -0.1 a emitter cut-off current i ebo v eb = -3v, i c =0 -0.1 a h fe(1) v ce = -1v, i c = -50ma 120 400 dc current gain h fe(2) v ce = -1v, i c = -500ma 50 collector-emitter saturation voltage v ce (sat) i c =-500ma, i b = -50ma -0.6 v base-emitter saturation voltage v be (sat) i c =-500ma, i b = -50ma -1.2 v transition frequency f t v ce = -6v, i c = -20ma f= 30mhz 150 mhz classification of h fe(1) rank l h range 120-200 200-350 s8 550 1 date:2011/05 www.htsemi.com semiconductor jinyu s901 2
s8 550 2 date:2011/05 www.htsemi.com semiconductor jinyu s901 2 |
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